1SC2060P

Single Channel High-Power High-Frequency SCALE-2 Driver Core

SCALE-2 technology with planar transformers

60A gate current for driving large IGBT modules in parallel

20W output power for high-frequency applications up to 500kHz

Short Description

The 1SC2060P is the latest, powerful member of CONCEPT’s driver core family. The high-performance SCALE-2 driver core targets high-power single-channel IGBT and MOSFET applications such as induction heating, resonant and high-frequency power conversion as well as parallel gate drive of large modules.

The introduction of planar transformer technology allows a leap forward in power density, noise immunity, and reliability.

Equipped with the latest SCALE-2 chipset the gate driver supports switching at up to 500kHz with best in class efficiency. The 1SC2060P effectively comprises a complete single-channel IGBT driver core, fully equipped with an isolated DC/DC converter, short-circuit protection, advanced active clamping, and supply-voltage monitoring.

With its extremely compact outline of 44mm x 74mm and a total height of just 7mm, it delivers high power density in an attractive form factor. The highly integrated SCALE-2 chipset reduces the component count by 80% compared to conventional solutions, thus significantly increasing reliability and reducing costs.

The embedded paralleling capability allows easy inverter design covering higher power ratings.

IGBT Mode

Merging 60A gate current with 20W output power makes the 1SC2060P the ultimate high-power driver platform for both single and parallel gate drive of large IGBT modules. In the dedicated IGBT mode, the driver provides a gate voltage swing of +15V/–10V. The turn-on voltage is regulated to maintain a stable 15V regardless of the output power level.

Superior EMC allows reliable operation even in the industry’s harshest environments. The 1SC2060P is suited for high-power IGBTs with blocking voltages up to 1700V.

MOSFET Mode

A dedicated MOSFET mode is implemented in the 1SC2060P. It allows any gate voltage swing of +10V…+20V/0V to make the most of the driver’s 500kHz switching speed.

With the high output power, very short delay, and extremely small jitter, the 1SC2060P driver core has been specifically designed for high-power and ultra-fast switching to fully exploit the capabilities of state-of-the-art MOS power devices.

Benefits in Fast-Switching Applications

Fast switching not only requires high drive power and maximum frequency but also relies on tight control over crucial parameters such as the driver’s delay time and the associated jitter. A fast driver with a short delay introduces significantly less phase lag into the power system’s control loop. Less phase lag is of great importance for maintaining the stability of the control loop, thus allowing the benefits of fast switching to be fully exploited.

The 1SC2060P shares the SCALE-2 performance figures of fast signal transmission with less than 80ns delay time and extremely low jitter of less than ±1ns. It is this unique combination of high output power and stable precision that makes the 1SC2060P the first choice for highly optimized systems, where tight control over timing margins is mandatory.

Driving Parallel-Connected IGBTs

The driver allows direct parallel connection of any number of IGBT modules with individual drivers. This new pioneering concept for simple and reliable parallel connection makes it practical for the first time to set up converter series with discrete modules as well as parallel-connected IGBTs without any additional development effort.

Direct parallel connection: How does it work?

Key Data Overview

Parameter	Min	Typical	Max	Unit
Nominal supply voltage		15		V
Supply current @ f_IN 0Hz		52		mA
Supply current, full load		1.58		A
Output power		20		W
Gate voltage IGBT mode		+15/-10		V
Gate voltage MOSFET mode		+10..20/0		V
Peak output current (gate current)	-60		+60	A
Switching frequency f_IN	0		500	kHz
Duty cycle	0		100	%
Turn-on delay		75		ns
Turn-off delay		70		ns
Output rise time		10		ns
Output fall time		15		ns
Creepage distance	15			mm
Clearance distance	15			mm
Dielectric test voltage	5000			V_AC
Partial discharge extinction voltage	1768			V_peak
dv/dt immunity, input to output		100		kV/us
Operating temperature	-40		+85	°C