2BB0435T

Basic board for 2SC0435T driver core

Speed up reliable and cost effectiv IGBT-stack design

Suitable to drive almost all available dual IGBT modules up to 1700V

35A gate current and 2 x 3W output power

Short Description

The 2BB0435T Basic Boards offer an easy, low-cost way to evaluate the 2SC0435T SCALE-2 gate driver cores with different IGBT modules and technologies by providing plug-and-play capability. The standardized DIC-20 interface used with all SCALE-2 Plug-and-Play drivers, with its wide adaptability, options for customized volume production and open access to schematics, layout data and support, makes such an approach into a fast, inexpensive and consequently very attractive solution.

The basic board is suitable to drive almost all available dual IGBT modules up to 1700V like 62mm IGBT modules, 130mm x 140mm IGBT modules and others. The plug-and-play capability makes it ready to operate immediately after mounting. The user needs invest almost no effort in designing or adjusting it to a specific application.

Motivation and Product Target

IGBT-stack design as the heart of a power conversion equipment is a critical task. The R&D departments is challenged with competing targets like reliability, performance and cost, while having tough time-to-market requirements. One dimension of this job is to control the IGBT secure gate-drive-design.

To implement the 2SC0435T driver core in the overall stack design the 2BB0435T basic board have been designed to speed up the design cycle. Their functionality includes advanced active clamping, short circuit detection and all other necessary components - except for the gate resistors - needed to set the driver core into operation. Air-and creepage distances are designed for 1700V systems according to EN 50178. Naturally all SCALE-2 features come along with these solutions. This gate driver is consequently suitable for all known applications – the SCALE-2 drivers inherently support not only 2-level but also 3-level and multi-level topologies as well as parallel-connected IGBTs equipped with separate gate drivers (direct paralleling).

Open Design and Superior Support

Wide adaptability, full support, several options for factory-set configuration or user customization, combined with open access to schematics and production layout data (Gerber files, BOM) make this a fast, inexpensive and therefore very attractive approach for different solutions. The basic board may be used for prototype or small-volume series. Alternatively, users may prefer to use the core and layout data just to adapt the driver to their own environment. Even the use of plug-and-play drivers represents a simple transition as the technology is exactly the same.

Availability

Small volumes for evaluation are available from stock. The basic boards are delivered without driver cores or gate resistors. At minimum order quantities of 1000, the basic boards can also be assembled with their respective gate drivers and required gate resistors. Other adaptations will be provided upon request.

In order to integrate the layout data of these tried-and-tested boards in the customers design all layout and production data are available for download.

Driving Parallel-Connected IGBTs

The driver allows direct parallel connection of any number of IGBT modules with individual drivers. This new pioneering concept for simple and reliable parallel connection makes it practical for the first time to set up converter series with discrete modules as well as parallel-connected IGBTs without any additional development effort.

Direct parallel connection: How does it work?

Key Data Overview

Parameter	Min	Typical	Max	Unit
Nominal supply voltage		15		V
Supply current @ f_IN 0Hz		58		mA
Supply current, full load		550		mA
Output power per channel		3		W
Gate voltage		+15/-10		V
Peak output current (gate current)	-35		+35	A
Switching frequency f_IN	0		100	kHz
Duty cycle	0		100	%
Turn-on delay		85		ns
Turn-off delay		70		ns
Output rise time		20		ns
Output fall time		20		ns
Creepage distance primary-secondary	15.7			mm
Creepage secondary-secondary	6.6			mm
Clearance distance primary-secondary	15.7			mm
Clearance distance secondary-secondary	6.6			mm
Dielectric test voltage	5000			V_AC
Partial discharge extinction voltage	1768			V_peak
dv/dt immunity, input to output		75		kV/us
Operating temperature	-40		+85	°C