2SC0650P

Dual Channel High-Power High-Frequency SCALE-2 Driver Core

SCALE-2 technology with planar transformers

50A gate current and 2 x 6W output power

Ultra-flat and highest power density

Short Description

The new SCALE-2 dual driver core 2SC0650P combines highest power density with broad applicability. The driver is designed for both high-power and high-frequency applications requiring maximum reliability. It is suitable for IGBTs with reverse voltages up to 1700V and also features a dedicated MOSFET mode. The embedded paralleling capability allows easy inverter design covering higher power ratings. Multi-level topologies are also supported.

Advantages of the Technology

CONCEPT’s patented planar-transformer technology assures efficient and high-voltage isolation with long-term reliability and sets new milestones in compactness, interference immunity and performance. Its outstanding EMC with a dv/dt strength of more than 100V/ns allows safe and reliable operation in even the toughest industrial applications.

Thanks to its ultra-flat design with an insertion height of only 6.5mm and a footprint of 57 x 62mm, the 2SC0650P can efficiently utilize even the most constrained insertion spaces. Compared with conventional drivers, the highly integrated SCALE-2 chipset allows about 85% of components to be dispensed with. This advantage is impressively reflected in increased reliability at simultaneously minimized cost.

Equipped with the latest SCALE-2 technology, the driver core opens up the possibility of working with clock frequencies of up to 150kHz – at best-in-class efficiency. The 2SC0650P combines a complete two-channel driver core with all components required for driving, such as an isolated DC/DC converter, short-circuit protection, improved active clamping as well as supply voltage monitoring. Each of the two output channels is electrically isolated from the primary side and the other secondary channel.

IGBT Mode

An output current of 50A and 6W drive power is available per channel, making the 2SC0650P an ideal driver platform both for high-power modules and parallel circuits. In the dedicated IGBT mode, the driver provides a gate voltage swing of +15V/–10V. The turn-on voltage is regulated to maintain a stable 15V regardless of the output power level.

Superior EMC with dv/dt > 100V/ns allows reliable operation even in the industry’s harshest environments. The 2SC0650P is suited for high-power IGBTs with blocking voltages up to 1700V.

MOSFET Mode

A dedicated MOSFET mode is implemented in the 2SC0650P. It allows any gate voltage swing of +10V…+20V/0V to make the most of the driver’s 150kHz switching speed.

With the high output power, very short delay, and extremely small jitter, the 2SC0650P driver core has been specifically designed for high-power and ultra-fast switching to fully exploit the capabilities of state-of-the-art MOS power devices.

Benefits in Fast-Switching Applications

Fast switching not only requires high drive power and maximum frequency but also relies on tight control over crucial parameters such as the driver’s delay time and the associated jitter. A fast driver with a short delay introduces significantly less phase lag into the power system’s control loop. Less phase lag is of great importance for maintaining the stability of the control loop, thus allowing the benefits of fast switching to be fully exploited.

The 2SC0650P shares the SCALE-2 performance figures of fast signal transmission with less than 80ns delay time and extremely low jitter of less than ±1ns. It is this unique combination of high output power and stable precision that makes the 2SC0650P the first choice for highly optimized systems, where tight control over timing margins is mandatory.

Driving Parallel-Connected IGBTs

The driver allows direct parallel connection of any number of IGBT modules with individual drivers. This new pioneering concept for simple and reliable parallel connection makes it practical for the first time to set up converter series with discrete modules as well as parallel-connected IGBTs without any additional development effort.

Direct parallel connection: How does it work?

Key Data Overview

Parameter	Min	Typical	Max	Unit
Nominal supply voltage		15		V
Supply current @ f_IN 0Hz		78		mA
Supply current, full load		1.2		A
Output power per channel		6		W
Gate voltage IGBT mode		+15/-10		V
Gate voltage MOSFET mode		+10..20/0		V
Peak output current (gate current)	-50		+50	A
Switching frequency f_IN	0		150	kHz
Duty cycle	0		100	%
Turn-on delay		75		ns
Turn-off delay		70		ns
Output rise time		15		ns
Output fall time		30		ns
Creepage distance primary-secondary	15			mm
Creepage secondary-secondary	25			mm
Clearance distance primary-secondary	15			mm
Clearance distance secondary-secondary	6.5			mm
Dielectric test voltage			5000	V_AC
Partial discharge extinction voltage	1768			V_peak
dv/dt immunity, input to output		100		kV/us
Operating temperature	-40		+85	°C